V. G. Khlabutin

4 ta ish

Institute of Nuclear Physics, Tomsk Polytechnical Institute

1. Investigation of Quantum States of Fast Electrons under Planar Channeling in Silicon Crystals

   Vladimir I. Gridnev, V. V. Kaplin, V. G. Khlabutin +2

   MaqolaCrystallography and Radiation Phenomenaphysica status solidi (b)19872 iqtibos

   ABIABI:AkademIndex/openalex/1987.article.000013

2. Observation of similarity of angular distributions of electrons at planar channeling in silicon crystal

   Vladimir I. Gridnev, V. G. Khlabutin, E. I. Rozum +1

   MaqolaCrystallography and Radiation Phenomenaphysica status solidi (b)19870 iqtibos

   ABIABI:AkademIndex/openalex/1987.article.000119

3. Quantum Modulation of Electron Dechanneling

   V. G. Khlabutin, Vladimir I. Gridnev, E. I. Rozum

   MaqolaNuclear materials and radiation effectsphysica status solidi (b)19880 iqtibos

   ABIABI:AkademIndex/openalex/1988.article.000103

4. Volume capture of 1.5 to 5.7 MeV electrons in quantum channeling states

   V. V. Kaplin, Vladimir I. Gridnev, V. G. Khlabutin +2

   MaqolaCrystallography and Radiation Phenomenaphysica status solidi (b)19890 iqtibos

   ABIABI:AkademIndex/openalex/1989.article.000023