A. S. Lutovich

1 ta ish

Tashkent Polytechnical Institute; Institute of Electronics, Uzbek Academy of Sciences , Tashkent, USSR

1. Ion bombardment effect on Si homoepitaxial growth from ion molecular beams

   T.S. Pugacheva, М. С. Саидов, A. S. Lutovich

   MaqolaIon-surface interactions and analysisRadiation Effects19871 iqtibos

   ABIABI:AkademIndex/openalex/1987.article.000061