T.S. Pugacheva
9 ta ish
Tashkent State Technical University, Universitetskaja 2, 700095 Tashkent, Uzbekistan
Electronic structure and optical properties of CaF2 films under low energy Ba+ ion-implantation combined with annealing
Б. Е. Умирзаков, T.S. Pugacheva, A.T. Tashatov +1
MaqolaInorganic Fluorides and Related CompoundsNuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms200016 iqtibosABIThe radiation stimulated diffusion role in high dose, low energy, high temperature ion implantation
S.H. Valiev, T.S. Pugacheva, F.G. Jurabekova +2
MaqolaSilicon and Solar Cell TechnologiesNuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms19971 iqtibosABIComputer simulation of ion implantation with visual observation of the implantation profiles
F.G. Djurabekova, T.S. Pugacheva, F.F. Umarov +1
MaqolaSilicon and Solar Cell Technologies2000 International Conference on Ion Implantation Technology Proceedings. Ion Implantation Technology - 2000 (Cat. No.00EX432)20020 iqtibosABIComputer simulation of ion implantation with visual observation of the implantation profiles
Flyura Djurabekova, T.S. Pugacheva, F. F. Umarov +1
MaqolaIon-surface interactions and analysis2000 International Conference on Ion Implantation Technology Proceedings. Ion Implantation Technology - 2000 (Cat. No.00EX432)20030 iqtibosABI