F.G. Dzhurabekova

3 ta ish

Helsinki Institute of Physics and Department of Physics, University of Helsinki, P.O. Box 43, Helsinki, FI-00014, Finland

1. Synergetics of catastrophic failures of semiconductor devices under high-energy ion irradiation

   Б. Л. Оксенгендлер, F.G. Dzhurabekova, С. Е. Максимов +1

   MaqolaNuclear Issues and DefenseJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20162 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.530316

2. The simulation of silicon doping by ion bombardment

   T.S. Pugacheva, F.G. Dzhurabekova, S.A. Lem

   MaqolaIon-surface interactions and analysis19950 iqtibos

   ABIABI:AkademIndex/openalex/1995.article.000192

3. The profiles of barium distributions in GaAs doped by low energy barium ions

   Д. А. Ташмухамедова, F.G. Dzhurabekova, Mirzhalilova +1

   MaqolaIon-surface interactions and analysis19970 iqtibos

   ABIABI:AkademIndex/openalex/1997.article.000301