Axel Göldner

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1. Lasing and Gain Mechanisms in AlGaN-GaN-Double Heterostructures: Correlation with Structural Properties

   J. Holst, M. Straßburg, N. N. Ledentsov +13

   MaqolaGaN-based semiconductor devices and materialsMaterials science forum19980 iqtibos

   ABIABI:AkademIndex/openalex/1998.article.000219