A. Usikov

2 ta ish

Russian Academy of Sciences

1. Lasing and Gain Mechanisms in AlGaN-GaN-Double Heterostructures: Correlation with Structural Properties

   J. Holst, M. Straßburg, N. N. Ledentsov +13

   MaqolaGaN-based semiconductor devices and materialsMaterials science forum19980 iqtibos

   ABIABI:AkademIndex/openalex/1998.article.000219

2. Lasing in the vertical direction in quantum-size InGaN/GaN multilayer heterostructures

   A. V. Sakharov, W. V. Lundin, V. A. Semenov +4

   MaqolaGaN-based semiconductor devices and materialsTechnical Physics Letters19990 iqtibos

   ABIABI:AkademIndex/openalex/1999.article.000100