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K. A. Begmatov

7 ta ish

Institute of Nuclear Physics , Ulugbek, Tashkent, 702132, Uzbekistan

  1. The radiation-induced defects production in P-type silicon doped by impurities of transitional elements

    Marat S. Yunusov, M. Kаrimov, M. N. Alkulov +1

    MaqolaSilicon and Solar Cell TechnologiesRadiation effects and defects in solids20003 iqtibos
    ABI

  2. Interaction of deep impurities with radiation defects in n-Si at γ-irradiation

    Sh. Makhkamov, M. Kаrimov, Z. M. Khakimov +4

    MaqolaSilicon and Solar Cell TechnologiesRadiation effects and defects in solids20052 iqtibos
    ABI

  3. On several regularities of deep levels of d-impurities in silicon

    Marat S. Yunusov, A. Akhmadaliev, Б. Л. Оксенгендлер +1

    MaqolaSilicon and Solar Cell Technologiesphysica status solidi (a)19952 iqtibos
    ABI

  4. Relaxation kinetics of photoconductivity in р-silicon compensated by phosphorus atoms

    M. Kаrimov, Sh. Makhkamov, N.A. Tursunov +4

    MaqolaAdvanced Materials and Semiconductor TechnologiesRussian Physics Journal20091 iqtibos
    ABI

  5. Semiconductor detector as ionising radiation dosimeter

    Marat S. Yunusov, A. Akhmadaliev, K. A. Begmatov

    MaqolaRadiation Detection and Scintillator TechnologiesRadiation Physics and Chemistry19951 iqtibos
    ABI

  6. Interaction of deep level impurities with radiation defects in silicon under γ -irradiation

    N.J. Odilova, M. Kаrimov, K. A. Begmatov +2

    MaqolaSilicon and Solar Cell Technologies20030 iqtibos
    ABI

  7. Formation processes of radiation defects in silicon at high temperature irradiation

    N.A. Tursunov, Sh. Makhkamov, M. Ashurov +3

    MaqolaSilicon and Solar Cell Technologies20040 iqtibos
    ABI