Interaction of deep impurities with radiation defects in n-Si at γ-irradiation
Sh. MakhkamovInstitute of Nuclear Physics of Uzbekistan Academy of Sciences , 702132, Tashkent, Ulugbek, UzbekistanM. KаrimovInstitute of Nuclear Physics of Uzbekistan Academy of Sciences , 702132, Tashkent, Ulugbek, UzbekistanZ. M. KhakimovInstitute of Nuclear Physics of Uzbekistan Academy of Sciences , 702132, Tashkent, Ulugbek, UzbekistanNaira OdilovaNational University of Uzbekistan, Vuzgorodok, GSP , 700095, Tashkent, UzbekistanSh. A. MakhmudovNational University of Uzbekistan, Vuzgorodok, GSP , 700095, Tashkent, UzbekistanA. O. KurbanovAndijan State University , 710020, Andijan, Namangan Street 129, UzbekistanK. A. BegmatovInstitute of Nuclear Physics of Uzbekistan Academy of Sciences , 702132, Tashkent, Ulugbek, Uzbekistan
ABI
Annotatsiya
This work presents the results of research on peculiarities of radiation defect formation in single crystal n-Si, doped by deep level impurities (Cu, Ni, Ir, Rh, Pt and Au), at irradiation by γ-quanta of 60Co. A property of γ-irradiation to create only vacancies and self-interstitial atoms is used to understand the nature of deep levels with participation of these impurities and primary elemental radiation defects. The role of covalence radii and diffusion coefficients in efficiency of radiation defect formation is discussed.
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