G. Eifler

1 ta ish

Institut für Halbleitertechnik, Pfaffenwaldring 47, D-70569 Stuttgart, Germany

1. Investigation of the silicon ion density during molecular beam epitaxy growth

   G. Eifler, E. Kasper, Х. Б. Ашуров +1

   MaqolaSemiconductor materials and devicesJournal of Vacuum Science & Technology A Vacuum Surfaces and Films20021 iqtibos

   ABIABI:AkademIndex/openalex/2002.article.000106