I.S. Samiev

4 ta ish

Tashkent State Aviation Institute, Tashkent, Uzbekistan

1. About the mechanism of formation and growth of the higher manganese silicide films on silicon

   T. S. Kamilov, D.K. Kabilov, I.S. Samiev +6

   MaqolaSemiconductor materials and interfaces20053 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.424565

2. Formation of higher manganese silicide films on silicon

   T. S. Kamilov, D.K. Kabilov, I.S. Samiev +3

   MaqolaSemiconductor materials and interfacesTechnical Physics20052 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.199248

3. The thermoelectric radiation detector based on the multielement structures of the higher manganese silicide films

   T. S. Kamilov, D.K. Kabilov, I.S. Samiev +2

   MaqolaSemiconductor materials and interfaces20051 iqtibos

   ABIABI:AkademIndex/openalex/2005.article.000252

4. Growth technique and structural properties of the higher manganese silicide films

   T. S. Kamilov, D.K. Kabilov, I.S. Samiev +3

   MaqolaSemiconductor materials and interfaces20051 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.609626