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D.K. Kabilov

9 ta ish

Institute of Electronics, Academy of Sciences of the Republic of Uzbekistan, 33 F Hodzhaev st., Tashkent 700143, Uzbekistan

  1. Photoelectric properties of higher manganese silicide (HMS)-SilangleMnrangle-M structures

    T. S. Kamilov, V. P. Chirva, D.K. Kabilov

    MaqolaSemiconductor materials and interfacesSemiconductor Science and Technology199911 iqtibos
    ABI

  2. About the mechanism of formation and growth of the higher manganese silicide films on silicon

    T. S. Kamilov, D.K. Kabilov, I.S. Samiev +6

    MaqolaSemiconductor materials and interfaces20053 iqtibos
    ABI

  3. Role of the silicon dioxide in formation of higher manganese silicide films

    T. S. Kamilov, A.A. Uzokov, D.K. Kabilov +3

    MaqolaAdvanced Thermoelectric Materials and Devices20042 iqtibos
    ABI

  4. Formation of higher manganese silicide films on silicon

    T. S. Kamilov, D.K. Kabilov, I.S. Samiev +3

    MaqolaSemiconductor materials and interfacesTechnical Physics20052 iqtibos
    ABI

  5. Development of thermoelectric detectors on the basis of higher manganese silicide (HMS) films

    T. S. Kamilov, A.A. Uzokov, D.K. Kabilov +5

    MaqolaAdvanced Thermoelectric Materials and Devices20041 iqtibos
    ABI

  6. The thermoelectric radiation detector based on the multielement structures of the higher manganese silicide films

    T. S. Kamilov, D.K. Kabilov, I.S. Samiev +2

    MaqolaSemiconductor materials and interfaces20051 iqtibos
    ABI

  7. Growth technique and structural properties of the higher manganese silicide films

    T. S. Kamilov, D.K. Kabilov, I.S. Samiev +3

    MaqolaSemiconductor materials and interfaces20051 iqtibos
    ABI

  8. Investigation of the Magnesium Silicide -- Mg<sub>2</sub>Si Films

    T. S. Kamilov, D.K. Kabilov, R.Kh. Kamilova +4

    MaqolaSemiconductor materials and interfaces20060 iqtibos
    ABI

  9. About the Interface Between the Higher Manganese Silicide Film and Si (111)

    T. S. Kamilov, D.K. Kabilov, S.Kh. Babadjanov +5

    MaqolaSemiconductor materials and interfaces20060 iqtibos
    ABI