S. Dadamuhamedov

3 ta ish

Physical Technical-Institute, Uzbek Academy of Sciences, Tashkent, Uzbekistan

1. About the mechanism of formation and growth of the higher manganese silicide films on silicon

   T. S. Kamilov, D.K. Kabilov, I.S. Samiev +6

   MaqolaSemiconductor materials and interfaces20053 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.424565

2. The thermoelectric radiation detector based on the multielement structures of the higher manganese silicide films

   T. S. Kamilov, D.K. Kabilov, I.S. Samiev +2

   MaqolaSemiconductor materials and interfaces20051 iqtibos

   ABIABI:AkademIndex/openalex/2005.article.000252

3. Growth technique and structural properties of the higher manganese silicide films

   T. S. Kamilov, D.K. Kabilov, I.S. Samiev +3

   MaqolaSemiconductor materials and interfaces20051 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.609626