M. Takeda

1 ta ish

Department of Mechanical Engineering, Nagaoka University of Technology, Japan

1. About the mechanism of formation and growth of the higher manganese silicide films on silicon

   T. S. Kamilov, D.K. Kabilov, I.S. Samiev +6

   MaqolaSemiconductor materials and interfaces20053 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.424565