Н. С. Болтовец

1 ta ish

State Enterprise Research Institute “Orion”

1. Features of the Formation of Ohmic Contacts to n+-InN

   Pavlo Sai, N. V. Safryuk-Romanenko, Dmytro B. But +6

   MaqolaGaN-based semiconductor devices and materialsUkrainian Journal of Physics20190 iqtibos

   ABIABI:AkademIndex/openalex/2019.article.001077