V. V. Shynkarenko

1 ta ish

Lashkaryov Institute of Semiconductor Physics, Nat. Acad. of Sci. of Ukraine

1. Features of the Formation of Ohmic Contacts to n+-InN

   Pavlo Sai, N. V. Safryuk-Romanenko, Dmytro B. But +6

   MaqolaGaN-based semiconductor devices and materialsUkrainian Journal of Physics20190 iqtibos

   ABIABI:AkademIndex/openalex/2019.article.001077