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Y. A. Abduganiev

6 ta ish

Tashkent State Technical University, 100095 Tashkent, Uzbekistan

  1. Magnetic Properties of Silicon Doped with Impurity Atoms of Europium

    Н. Ф. Зикриллаев, G. H. Mavlonov, Levent Trabzon +4

    MaqolaMagnetic properties of thin filmsJournal of Nano- and Electronic Physics20235 iqtibos
    ABI

  2. Optical Properties of GexSi1 – x Binary Compounds in Silicon

    Н. Ф. Зикриллаев, Habibjon Kushiev, Shahzodbek I. Hamrokulov +1

    MaqolaSemiconductor materials and interfacesJournal of Nano- and Electronic Physics20235 iqtibos
    ABI

  3. Effect of Compensation Degree and Concentration of Impurity Electroactive Selenium Atoms on Current Auto-Oscillation Parameters in Silicon

    Н. Ф. Зикриллаев, K. S. Ayupov, Manzura M. Shoabdirahimova +4

    MaqolaSilicon and Solar Cell TechnologiesEast European Journal of Physics20232 iqtibos
    ABI

  4. Magnetic Properties of Silicon with Paramagnetic Impurity Atoms

    N. F. Zikrillayev, Г. Х. Мавлонов, Levent Trabzon +4

    MaqolaSemiconductor materials and interfacesEast European Journal of Physics20231 iqtibos
    ABI

  5. Ordering of europium magnetic domains in silicon at room temperature

    G. H. Mavlonov, С. Б. Исамов, S. Koveshnikov +4

    MaqolaMagnetic properties of thin filmsIndian Journal of Physics20241 iqtibos
    ABI

  6. Physical and Magnetic Properties of Silicon Doped with Impurity Germanium Atoms

    N. F. Zikrillayev, F. E. Urakova, A. Toshev +4

    MaqolaSemiconductor materials and interfacesEast European Journal of Physics20250 iqtibos
    ABI