G. H. Mavlonov

5 ta ish

Tashkent State Technical University, Tashkent, 100095, Uzbekistan

1. Specific features of magnetoresistance in overcompensated manganese-doped silicon

   M. K. Bakhadirkhanov, G. H. Mavlonov, X. M. Iliev +3

   MaqolaMagnetic Properties and ApplicationsSemiconductors20147 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.319032

2. Magnetic Properties of Silicon Doped with Impurity Atoms of Europium

   Н. Ф. Зикриллаев, G. H. Mavlonov, Levent Trabzon +4

   MaqolaMagnetic properties of thin filmsJournal of Nano- and Electronic Physics20235 iqtibos

   ABIABI:AkademIndex/openalex/2023.article.000934

3. Features of the electrophysical parameters of silicon serially doped with impurity atoms of phosphorus and boron

   Zikrillayev Kh. F., K. S. Ayupov, G. H. Mavlonov +2

   MaqolaSilicon and Solar Cell TechnologiesФизика и техника полупроводников20221 iqtibos

   ABIABI:AkademIndex/openalex/2022.article.000912

4. Ordering of europium magnetic domains in silicon at room temperature

   G. H. Mavlonov, С. Б. Исамов, S. Koveshnikov +4

   MaqolaMagnetic properties of thin filmsIndian Journal of Physics20241 iqtibos

   ABIABI:AkademIndex/openalex/2024.article.001379

5. Magnetic properties of silicon with nanoclusters of manganese atoms

   K. S. Ayupov, М. К. Бахадырханов, G. H. Mavlonov +3

   MaqolaMaterial Science and Thermodynamics20100 iqtibos

   ABIABI:AkademIndex/openalex/2010.article.000533