Zikrillayev Kh. F.

1 ta ish

Tashkent State Technical University, Tashkent, Uzbekistan

1. Features of the electrophysical parameters of silicon serially doped with impurity atoms of phosphorus and boron

   Zikrillayev Kh. F., K. S. Ayupov, G. H. Mavlonov +2

   MaqolaSilicon and Solar Cell TechnologiesФизика и техника полупроводников20221 iqtibos

   ABIABI:AkademIndex/openalex/2022.article.000912