X. S. Turekeev

3 ta ish

Tashkent State Technical University, Tashkent, Uzbekistan

1. Effect of the presence of a sufficiently high phosphorus concentration on the concentration distribution of gallium in silicon

   M. K. Bakhadirkhanov, Zikrillaev N.F., С. Б. Исамов +2

   MaqolaAdvanced Materials and Semiconductor TechnologiesФизика и техника полупроводников20222 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.251145

2. Composition of Silicon Alloyed with Gallium and Phosphorus Atoms

   Н. Ф. Зикриллаев, S. Koveshnikov, X. S. Turekeev +1

   MaqolaSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20241 iqtibos

   ABIABI:AkademIndex/openalex/2024.article.002944

3. Composition of silicon jointly doped with impurity atoms of gallium and phosphorus

   Н. Ф. Зикриллаев, S. Koveshnikov, X. S. Turekeev +1

   MaqolaSilicon and Solar Cell TechnologiesПоверхность Рентгеновские синхротронные и нейтронные исследования20240 iqtibos

   ABIABI:AkademIndex/openalex/2024.article.007427