Xuemin Cui

1 ta ish

School of Material Science and Engineering, Shenyang Aerospace University, Shenyang, China

1. Current Mechanisms in Zinc Diffusion-Doped Silicon Samples at T = 300 K

   E.U. Arzikulov, M. Radzhabova, Xuemin Cui +6

   MaqolaSemiconductor materials and interfacesEast European Journal of Physics20240 iqtibos

   ABIABI:AkademIndex/openalex/2024.article.010089