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Ish: Carrier transport in a diode base with locally nonuniform recombination properties

1. On the generation of radiation defects by accelerated ions in silicon

   А. В. Иванов, N. B. Strokan

   MaqolaSilicon and Solar Cell TechnologiesTechnical Physics Letters19980 iqtibos

   ABIABI:AkademIndex/1998.article.000274