Ushbu ish iqtibos qilgan ishlar

3 ta ish

Ish: Unstrained epitaxial InxGa1−xAs films obtained on porous GaAs

1. Sarlavhasiz

   Boshqa1 iqtibos

   ABIABI:AkademIndex/2026.other.522140

2. Sarlavhasiz

   Boshqa1 iqtibos

   ABIABI:AkademIndex/2026.other.522141

3. Growth of cubic GaN by molecular-beam epitaxy on porous GaAs substrates

   V. V. Mamutin, V. P. Ulin, V. V. Tret’yakov +3

   MaqolaGaN-based semiconductor devices and materialsTechnical Physics Letters19991 iqtibos

   ABIABI:AkademIndex/2026.other.522142