Ushbu ish iqtibos qilgan ishlar

9 ta ish

Ish: Effect of the Ge content on the Schottky barrier height in structures based on Si1 − x Ge x solid solution

1. Physics of Semiconductor Devices

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2. The physics of semiconductor devices

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3. Laterally-Graded SiGe Crystals for High Resolution Synchrotron Optics

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4. New semiconductor detectors for nuclear radiation utilizing Si1-x Ge x alloy

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5. Surface barrier detectors using aluminum on n- and p-type silicon for α-spectroscopy

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   Maqola20013 iqtibos

   ABIABI:AkademIndex/2026.other.552666

6. Metal–semiconductor junctions on <i>p</i>-type strained Si1−<i>x</i>Ge<i>x</i> layers

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   Maqola19962 iqtibos

   ABIABI:AkademIndex/2026.other.552668

7. Sputtered gold as an effective Schottky gate for strained Si∕SiGe nanostructures

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8. Sarlavhasiz

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   ABIABI:AkademIndex/2026.other.552673

9. Sarlavhasiz

   Boshqa1 iqtibos

   ABIABI:AkademIndex/2026.other.667259