Photoconverters based on gallium arsenide diffused p-n junctions formed on a microprofile GaAs surface
A. A. AkopyanLashkarev Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Kiev, 03028, UkraineKh. N. BachronovPhysicotechnical Institute of the Scientific-and-Production Association “Physics-Sun”, Academy of Sciences of the Republic of Uzbekistan, Tashkent, 700084, UzbekistanO. Yu. BorkovskayaNATIONAL ACADEMY OF SCIENCES OF UKRAINEN. L. DmitrukLashkarev Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Kiev, 03028, UkraineD. M. YodgorovaAcademy of Sciences of the Republic Of UzbekistanA. V. KarimovPhysicotechnical Institute of the Scientific-and-Production Association “Physics-Sun”, Academy of Sciences of the Republic of Uzbekistan, Tashkent, 700084, UzbekistanР. В. КонаковаLashkarev Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Kiev, 03028, UkraineI.B. MamontovaNATIONAL ACADEMY OF SCIENCES OF UKRAINE
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The p-n junctions promising for photoconverters have been fabricated using diffusion from the gaseous phase and studied with the analysis of mass transport of the doping impurity (Zn) through the microprofile GaAs surface taken into account. Depending on the conditions of diffusion (the diffusant’s mass and diffusion duration), the formation of both a p-n junction in a microprofile and a planar p-n junction in the GaAs bulk with a heavily doped near-surface p + type layer is possible. Photoelectric characteristics of device structures with textured p-n junction and a thin wide-gap Al x Ga1 − x As window obtained by liquid-phase epitaxy are reported.
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