Maqola

Effect of different chemical treatments of surface on the height of Al-p-SiGe and Au-n-SiGe barriers

I. G. AtabaevStarodubtsev Physicotechnical Institute, Academy of Sciences of Uzbekistan, Tashkent, 100084, UzbekistanN. A. MatchanovStarodubtsev Physicotechnical Institute, Academy of Sciences of Uzbekistan, Tashkent, 100084, UzbekistanM. U. HajievAcademy of Sciences of UzbekistanV. A. PakAcademy of Sciences of UzbekistanTimur SalievAcademy of Sciences of Uzbekistan

Semiconductorsjournal2010en

Ochiq kirish: yoʻq

ABI

Annotatsiya

The effect of different chemical treatments on the properties of Au-n-SiGe and Al-p-SiGe Schottky barriers has been investigated. Etching under different conditions was used to prepare surfaces with different densities of surface states (D ss). It is shown that the barrier height in the structures under study correlates with the D ss value and germanium content in the Si1 − x Ge x alloy.

Hali tarjima qilinmagan

Mavzular

Semiconductor materials and devices Advancements in Semiconductor Devices and Circuit Design Semiconductor materials and interfaces

Identifikatorlar

DOI: 10.1134/s1063782610050106

Iqtiboslar va manbalar

0 ta iqtibos10 ta foydalanilgan manba