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10 ta ish

Ish: Effect of different chemical treatments of surface on the height of Al-p-SiGe and Au-n-SiGe barriers

  1. Physics of Semiconductor Devices

    J.-P. Colinge, Cindy Colinge

    Kitob200258 iqtibos
    ABI

  2. Physics of Semiconductor Devices

    Samarth Jain, S. Radhakrishna

    Maqola198715 iqtibos
    ABI

  3. Electron-Hole Recombination in Germanium

    R. N. Hall

    Maqola19524 iqtibos
    ABI

  4. Surface barrier detectors using aluminum on n- and p-type silicon for α-spectroscopy

    H. Rahab, A. Keffous, H. Menari +3

    Maqola20013 iqtibos
    ABI

  5. Barrier heights and silicide formation for Ni, Pd, and Pt on silicon

    G. Ottaviani, K. N. Tu, J. W. Mayer

    Maqola19812 iqtibos
    ABI

  6. Metal–semiconductor junctions on <i>p</i>-type strained Si1−<i>x</i>Ge<i>x</i> layers

    Omer Nur, M. Willander, Raşit Turan +2

    Maqola19962 iqtibos
    ABI

  7. Fabrication and characterization of Au/n-Si photodiode with lithium as back-surface-field

    A. Keffous, Marwa Zitouni, Y. Belkacem +2

    Maqola20022 iqtibos
    ABI

  8. Sputtered gold as an effective Schottky gate for strained Si∕SiGe nanostructures

    G. D. Scott, M. Xiao, H. W. Jiang +2

    Maqola20072 iqtibos
    ABI

  9. Modification of Al/Si interface and Schottky barrier height with chemical treatment

    Zs. J. Horváth, M. Ádám, I.A. Szabó +2

    Maqola20022 iqtibos
    ABI

  10. Sarlavhasiz

    Boshqa2 iqtibos
    ABI