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11 ta ish

Ish: Effect of surface chemical treatments on Ti-p-Si1 − x Gex and Ni-p-Si1 − x Ge x contact properties

  1. Physics of Semiconductor Devices

    J.-P. Colinge, Cindy Colinge

    Kitob200258 iqtibos
    ABI

  2. The physics of semiconductor devices

    R. H. Rediker

    Maqola197011 iqtibos
    ABI

  3. Methods for measuring parameters of semiconductor materials

    Diana E. Tuzova, Ekaterina A. Pecherskaya, Mikhail A. Nelyutskov +1

    Maqola20234 iqtibos
    ABI

  4. Electron-Hole Recombination in Germanium

    R. N. Hall

    Maqola19524 iqtibos
    ABI

  5. Surface barrier detectors using aluminum on n- and p-type silicon for α-spectroscopy

    H. Rahab, A. Keffous, H. Menari +3

    Maqola20013 iqtibos
    ABI

  6. Barrier heights and silicide formation for Ni, Pd, and Pt on silicon

    G. Ottaviani, K. N. Tu, J. W. Mayer

    Maqola19812 iqtibos
    ABI

  7. Fabrication and characterization of Au/n-Si photodiode with lithium as back-surface-field

    A. Keffous, Marwa Zitouni, Y. Belkacem +2

    Maqola20022 iqtibos
    ABI

  8. Modification of Al/Si interface and Schottky barrier height with chemical treatment

    Zs. J. Horváth, M. Ádám, I.A. Szabó +2

    Maqola20022 iqtibos
    ABI

  9. Thermal reaction of nickel and Si0.75Ge0.25 alloy

    K. L. Pey, W. K. Choi, Sujay Chattopadhyay +4

    Maqola20022 iqtibos
    ABI

  10. The interfacial reaction of Ni with (111)Ge, (100)Si0.75Ge0.25 and (100)Si at 400 °C

    L.J. Jin, K. L. Pey, W. K. Choi +6

    Maqola20042 iqtibos
    ABI

  11. Sarlavhasiz

    Boshqa1 iqtibos
    ABI