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Ish: Simulation of DIBL effect in 25 nm SOI-FinFET with the different body shapes

1. Impact of the channel shape, back oxide and gate oxide layers on self-heating in nanoscale JL FINFET

   A.E. Atamuratov, B.O. Jabbarova, M. M. Khalilloev +3

   MaqolaOAOchiq kirishSemiconductor materials and devicesNanosystems Physics Chemistry Mathematics20222 iqtibos

   ABIABI:AkademIndex/2026.other.511885

2. Amplitude of Random Telegraph Noise in Junctionless FinFET with Different Channel Shape

   A. É. Atamuratov, M. M. Khalilloev, Ahmed Yusupov +2

   MaqolaOAOchiq kirishAdvancements in Semiconductor Devices and Circuit Designe-Journal of Surface Science and Nanotechnology20210 iqtibos

   ABIABI:AkademIndex/2021.article.004230

3. Impacts of Local Oxide Trapped Charge on Electrical and Capacitance Characteristics of SOI FinFet

   A. É. Atamuratov, И. Н. Каримов, Mirzabahrom Foziljonov +3

   MaqolaOAOchiq kirishSemiconductor materials and devicesEast European Journal of Physics20250 iqtibos

   ABIABI:AkademIndex/2025.article.009018

4. Impact of the gate oxide material composition on the self-heating and short channel effects in nanosheet field effect transistor

   A.E. Atamuratov, D. R. Rajapov, M. M. Khalilloev +2

   PreprintOAOchiq kirishAdvancements in Semiconductor Devices and Circuit DesignResearch Square20260 iqtibos

   ABIABI:AkademIndex/2026.preprint.001199