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Ish: Spectral Photosensitivity and Temperature-Independent Volt–Ampere Characteristic of pSi–n(ZnSe)1 –x–y(Si2)x(GaP)y Structures

  1. Liquid-phase epitaxy of solid solutions (Ge2)1−x(ZnSe)x

    A.S. Saidov, A. Sh. Razzakov, V.A. Risaeva +1

    MaqolaChalcogenide Semiconductor Thin FilmsMaterials Chemistry and Physics200126 iqtibos
    ABI

  2. Max Hansen and Kurt Anderko: Constitution of Binary Alloys. McGraw-Hill Book Co., New York, 1958, 1305頁, 23×16cm, \13.000.

    秀世 間庭

    Maqola19587 iqtibos
    ABI

  3. Classification of impurity voltaic effects in semiconductors and impurity voltaics

    М. С. Саидов

    MaqolaSemiconductor Quantum Structures and DevicesApplied Solar Energy20086 iqtibos
    ABI

  4. On the theory of double injection in semiconductors with continuous distribution of trapping levels within the Gap

    A. Yu. Leĭderman

    MaqolaSilicon and Solar Cell Technologiesphysica status solidi (a)19794 iqtibos
    ABI

  5. Sarlavhasiz

    Boshqa3 iqtibos
    ABI

  6. Si-film growth using liquid phase epitaxy method and its application to thin-film crystalline Si solar cell

    Shoji Nishida, Katsumi Nakagawa, Masaaki Iwane +4

    Maqola20012 iqtibos
    ABI

  7. Sarlavhasiz

    Boshqa1 iqtibos
    ABI

  8. Sarlavhasiz

    Boshqa1 iqtibos
    ABI

  9. Sarlavhasiz

    Boshqa1 iqtibos
    ABI

  10. Sarlavhasiz

    Boshqa1 iqtibos
    ABI