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Ish: The Influence of Fin Shape on the Amplitude of Random Telegraph Noise in the Subthreshold Regime of a Junctionless FinFET

1. Amplitude of Random Telegraph Noise in Junctionless FinFET with Different Channel Shape

   A. É. Atamuratov, M. M. Khalilloev, Ahmed Yusupov +2

   MaqolaOAOchiq kirishAdvancements in Semiconductor Devices and Circuit Designe-Journal of Surface Science and Nanotechnology20210 iqtibos

   ABIABI:AkademIndex/2021.article.004230

2. Impacts of Local Oxide Trapped Charge on Electrical and Capacitance Characteristics of SOI FinFet

   A. É. Atamuratov, И. Н. Каримов, Mirzabahrom Foziljonov +3

   MaqolaOAOchiq kirishSemiconductor materials and devicesEast European Journal of Physics20250 iqtibos

   ABIABI:AkademIndex/2025.article.009018