Ushbu ish iqtibos qilgan ishlar

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Ish: Electric voltage redistribution effect in Schottky barrier structures based on Si<P,Ni> under hydrostatic pressure

1. Advanced Universal Hydrostatic Pressure Device with Pneumatic Amplifier for the Investigation of the Electrical and Thermal Properties of Semiconductors under Hydrostatic Pressure

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   MaqolaHigh-pressure geophysics and materialsInstruments and Experimental Techniques202211 iqtibos

   ABIABI:AkademIndex/2022.article.000422

2. Dynamic strain-sensitive characteristics of the Schottky-barrier diodes under a pulsed uniform pressure

   О. О. Маматкаримов, С. З. Зайнабидинов, Azizbek Abduraimov +2

   MaqolaElectromagnetic Launch and Propulsion TechnologySemiconductors20002 iqtibos

   ABIABI:AkademIndex/2000.article.000081

3. Tensoresistive effects in tin-doped silicon under static and dynamic pressure conditions

   О. О. Маматкаримов, Р. Х. Хамидов

   MaqolaForce Microscopy Techniques and ApplicationsTechnical Physics Letters20031 iqtibos

   ABIABI:AkademIndex/2003.article.000115