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32 ta ish

Ish: Effect of temperature on the current transfer mechanism in the reverse I–V characteristics of the <i>n</i>-CdS/<i>i</i>-CdS<sub><i>x</i></sub>Te1−x/<i>p</i>-CdTe heterostructure

  1. Injection photodiode based on an n-CdS/p-CdTe heterostructure

    Ш. А. Мирсагатов, R. R. Kabulov, M. A. Makhmudov

    MaqolaChalcogenide Semiconductor Thin FilmsSemiconductors201319 iqtibos
    ABI

  2. Evidence for grain-boundary-assisted diffusion of sulfur in polycrystalline CdS/CdTe heterojunctions

    M. K. Herndon, Anju Gupta, V. Kaydanov +1

    Maqola199916 iqtibos
    ABI

  3. Mechanism of current transport in Schottky barrier diodes based on coarse-grained CdTe films

    Ш. А. Мирсагатов, A.K. Uteniyazov, А.С. Ачилов

    MaqolaAdvanced Semiconductor Detectors and MaterialsPhysics of the Solid State201216 iqtibos
    ABI

  4. Growth of (GaAs)1 − x (ZnSe) x solid solution films and investigation of their structural and some photoelectric properties

    A.S. Saidov, М. С. Саидов, Sh. N. Usmonov +4

    MaqolaChalcogenide Semiconductor Thin FilmsPhysics of the Solid State20118 iqtibos
    ABI

  5. The study of factors that influence on the effectiveness of the photoconversion of n-CdS/p-CdTe heterostructures

    R. R. Kabulov, M. A. Makhmudov, O. K. Ataboev +1

    MaqolaChalcogenide Semiconductor Thin FilmsApplied Solar Energy20167 iqtibos
    ABI

  6. Photosensitivity of n-CdS/p-CdTe heterojunctions obtained by chemical surface deposition of CdS

    Г. А. Ильчук, V. V. Kus’nézh, V. Yu. Rud’ +3

    Maqola20106 iqtibos
    ABI

  7. Mechanism of charge transfer in injection photodiodes based on the In-n +-CdS-n-CdS x Te1 − x -p-Zn x Cd1 − x Te-Mo structure

    Ш. А. Мирсагатов, A. Yu. Leĭderman, O. K. Ataboev

    MaqolaChalcogenide Semiconductor Thin FilmsPhysics of the Solid State20136 iqtibos
    ABI

  8. Recent progress on CdTe/CdS thin film solar cells

    N. Romeo, A. Bosio, V. Canevari +1

    Maqola20045 iqtibos
    ABI

  9. Influence of the back contact on the electrophysical and functional characteristics of thin-film CdTe Schottky barrier detector structures

    Ш. А. Мирсагатов, А.С. Ачилов, B. N. Zaveryukhin +1

    MaqolaAdvanced Semiconductor Detectors and MaterialsRussian Physics Journal20124 iqtibos
    ABI

  10. CdTe solar cells with open-circuit voltage breaking the 1 V barrier

    James M. Burst, Joel N. Duenow, D. Albin +11

    Maqola20163 iqtibos
    ABI

  11. Effect of irradiation with gamma-ray photons on the charge-transport mechanism in n-CdS/p-CdTe heterostructures

    S. A. Muzafarova, Ш. А. Мирсагатов, F. N. Dzhamalov

    MaqolaAdvanced Semiconductor Detectors and MaterialsSemiconductors20093 iqtibos
    ABI

  12. Study of the intermediate layer at the n +-CdS/p-CdTe interface

    S. A. Muzafarova, B. U. Aĭtbaev, Ш. А. Мирсагатов +2

    MaqolaChalcogenide Semiconductor Thin FilmsSemiconductors20083 iqtibos
    ABI

  13. A new method for CdSexTe1-x band grading for high efficiency thin-absorber CdTe solar cells

    Elisa Artegiani, A. Gasparotto, Prabeesh Punathil +6

    Maqola20212 iqtibos
    ABI

  14. A review on the improvement in performance of CdTe/CdS thin-film solar cells through optimization of structural parameters

    Tarkeshwar Sinha, Devjyoti Lilhare, Ayush Khare

    Sharh maqola20192 iqtibos
    ABI

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  16. The electrical properties of n-CdS/p-CdTe and n-ZnS/p-CdTe heterojunctions fabricated by a combination of SILAR and vacuum deposition techniques

    V.K. Ashith, K. Priya, Gowrish K. Rao

    Maqola20212 iqtibos
    ABI

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