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21 ta ish

Ish: Changing the Voltage of the p-n Junction in a Magnetic Field

  1. On the tensosensitivity of a p-n junction under illumination

    G. Gulyamov, A. G. Gulyamov

    MaqolaOptical Polarization and EllipsometrySemiconductors201510 iqtibos
    ABI

  2. EMF Induced in a p–n Junction under a Strong Microwave Field and Light

    G. Gulyamov, У. И. Эркабоев, N. Yu. Sharibaev +1

    MaqolaMechanical and Optical ResonatorsSemiconductors20197 iqtibos
    ABI

  3. The nonideality coefficient of current-voltage characteristics for p-n junctions in a high ultrahigh-frequency (microwave) field

    S. H. Shamirzaev, G. Gulyamov, М. Г. Дадамирзаев +1

    MaqolaSilicon and Solar Cell TechnologiesSemiconductors20095 iqtibos
    ABI

  4. Eddy currents appearing in a p-n junction in a high microwave field

    S. H. Shamirzaev, G. Gulyamov, М. Г. Дадамирзаев +1

    MaqolaElectromagnetic Effects on MaterialsSemiconductors20115 iqtibos
    ABI

  5. Current–voltage characteristics of manganite–titanite perovskite junctions

    Benedikt Ifland, Patrick Peretzki, Birte Kressdorf +4

    Maqola20152 iqtibos
    ABI

  6. Bipolar-driven large linear magnetoresistance in silicon at low magnetic fields

    Michael P. Delmo, Eiji Shikoh, Teruya Shinjo +1

    Maqola20132 iqtibos
    ABI

  7. Geometrical enhancement of low-field magnetoresistance in silicon

    Caihua Wan, Xiaozhong Zhang, Xili Gao +2

    Maqola20112 iqtibos
    ABI

  8. A Large Magnetoresistance Effect in p–n Junction Devices by the Space‐Charge Effect

    Dezheng Yang, Fangcong Wang, Yang Ren +4

    Maqola20132 iqtibos
    ABI

  9. Electrical spin extraction and giant positive junction magnetoresistance in a Fe<sub>3</sub>O<sub>4</sub>/MgO/n-Si magnetic diode like heterostructure

    J. Panda, Progna Banerjee, T. K. Nath

    Maqola20142 iqtibos
    ABI

  10. Eddy currents in the p–n junction in a microwave field

    S. H. Shamirzaev, G. Gulyamov, М. Г. Дадамирзаев +1

    MaqolaSurface and Thin Film PhenomenaSemiconductors20092 iqtibos
    ABI

  11. Angular dependence of the magnetoresistance effect in a silicon based p–n junction device

    Tao Wang, Mingsu Si, Dezheng Yang +5

    Maqola20142 iqtibos
    ABI

  12. Magnetoresistance Amplification Effect in Silicon Transistor Device

    Tao Wang, Dezheng Yang, Mingsu Si +3

    Maqola20162 iqtibos
    ABI

  13. Thermal Stimulation of Photocurrent in p–n Junctions

    G. Gulyamov, A. G. Gulyamov, У. И. Эркабоев

    MaqolaSemiconductor materials and interfacesApplied Solar Energy20182 iqtibos
    ABI

  14. Magnetic field controlled hybrid semiconductor and resistive switching device for non-volatile memory applications

    Chengyue Xiong, Ziyao Lu, Siqi Yin +2

    Maqola20192 iqtibos
    ABI

  15. Light-Induced-Magnetoresistance in <i>p-n</i> Junction Device

    Yang Cao, Wenbo Sui, Tao Wang +4

    Maqola20202 iqtibos
    ABI

  16. Magnetically enhanced photoconductive high voltage control

    Gareth J. Monkman, Dirk Sindersberger, Nina Prem

    Maqola20222 iqtibos
    ABI

  17. Sarlavhasiz

    Boshqa1 iqtibos
    ABI

  18. Sarlavhasiz

    Boshqa1 iqtibos
    ABI

  19. Sarlavhasiz

    Boshqa1 iqtibos
    ABI

  20. Sarlavhasiz

    Boshqa1 iqtibos
    ABI

  21. Sarlavhasiz

    Boshqa1 iqtibos
    ABI