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25 ta ish

Ish: Effect of GaSb Compound on Silicon Bandgap Energy

  1. Transport properties of silicon doped with manganese via low-temperature diffusion

    М. К. Бахадырханов, Г. Х. Мавлонов, С. Б. Исамов +4

    MaqolaSilicon and Solar Cell TechnologiesInorganic Materials201126 iqtibos
    ABI

  2. Impurity photovoltaic effect in silicon with multicharge Mn clusters

    М. К. Бахадырханов, Х. М. Илиев, С. А. Тачилин +2

    MaqolaSemiconductor materials and interfacesApplied Solar Energy200812 iqtibos
    ABI

  3. Self-organization of nickel atoms in silicon

    М. К. Бахадырханов, Х. М. Илиев, K. S. Ayupov +3

    MaqolaSilicon Nanostructures and PhotoluminescenceInorganic Materials201110 iqtibos
    ABI

  4. Photoconductivity of silicon with multicharged clusters of manganese atoms [Mn]4

    М. К. Бахадырханов, Г. Х. Мавлонов, С. Б. Исамов +4

    MaqolaOchiq kirishInorganic Fluorides and Related CompoundsSurface Engineering and Applied Electrochemistry201010 iqtibos
    ABI

  5. Specific features of magnetoresistance in overcompensated manganese-doped silicon

    M. K. Bakhadirkhanov, G. H. Mavlonov, X. M. Iliev +3

    MaqolaMagnetic Properties and ApplicationsSemiconductors20147 iqtibos
    ABI

  6. Nanoscale III–V on Si-based junctionless tunnel transistor for EHF band applications

    Yogesh Goswami, Pranav Kumar Asthana, Bahniman Ghosh

    Maqola20173 iqtibos
    ABI

  7. High performance 20 nm GaSb/InAs junctionless tunnel field effect transistor for low power supply

    Pranav Kumar Asthana

    Maqola20152 iqtibos
    ABI

  8. Strain-induced the dark current characteristics in InAs/GaSb type-II superlattice for mid-wave detector

    H. J. Lee, Sung Yong Ko, Y. H. Kim +1

    Maqola20202 iqtibos
    ABI

  9. Wet etching and passivation of GaSb-based very long wavelength infrared detectors

    Xue-Yue Xu, Junkai Jiang, Wei‐Qiang Chen +10

    Maqola20222 iqtibos
    ABI

  10. Long-wavelength InAs/GaSb superlattice double heterojunction infrared detectors using InPSb/InAs superlattice hole barrier

    Jiafeng Liu, He Zhu, Hong Zhu +4

    Maqola20222 iqtibos
    ABI

  11. X-ray diffraction study of GaSb grown by molecular beam epitaxy on silicon substrates

    Jean‐Baptiste Rodriguez, K. Madiomanana, L. Cerutti +2

    Maqola20162 iqtibos
    ABI

  12. Beyond the Vegard's law: solid mixing excess volume and thermodynamic potentials prediction, from end-members

    Marcellο Merli, Alessandrο Pavese

    Maqola20192 iqtibos
    ABI

  13. Control of the magnetic properties of silicon with manganese atom nanoclusters

    М. К. Бахадырханов, Г. Х. Мавлонов, Х. М. Илиев

    MaqolaMagnetic Field Sensors TechniquesTechnical Physics20142 iqtibos
    ABI

  14. High-efficiency GaSb photocells

    В. П. Хвостиков, S. V. Sorokina, О. А. Хвостикова +5

    Maqola20132 iqtibos
    ABI

  15. Sarlavhasiz

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