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15 ta ish

Ish: Effect of Electron Bombardment on the Composition and Structure of CaF2/Si(111) Films

  1. Electron spectroscopy of the nanostructures created in Si, GaAs, and CaF2 surface layers using low-energy ion implantation

    Б. Е. Умирзаков, Д. А. Ташмухамедова, D. M. Muradkabilov +1

    MaqolaSemiconductor materials and interfacesTechnical Physics201320 iqtibos
    ABI

  2. Electronic structure and optical properties of CaF2 films under low energy Ba+ ion-implantation combined with annealing

    Б. Е. Умирзаков, T.S. Pugacheva, A.T. Tashatov +1

    MaqolaInorganic Fluorides and Related CompoundsNuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms200016 iqtibos
    ABI

  3. Emission and optical properties of SiO2/Si thin films

    Д. А. Ташмухамедова, M. B. Yusupjanova

    MaqolaSilicon Nanostructures and PhotoluminescenceJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20167 iqtibos
    ABI

  4. Study of the Influence of Implanted Atoms on the Coefficients of the Sputtering of Silicon and Silicon with a Thin Oxide Film

    Д. А. Ташмухамедова, M. B. Yusupjanova, A. K. Tashatov +1

    MaqolaIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20185 iqtibos
    ABI

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