Ushbu ish iqtibos qilgan ishlar

13 ta ish

Ish: Current Mechanisms in Zinc Diffusion-Doped Silicon Samples at T = 300 K

1. The electrical properties of zinc in silicon

   Sharon M. Weiss, R. Beckmann, Rainer Kassing

   Maqola19903 iqtibos

   ABIABI:AkademIndex/2026.other.557535

2. Carrier transport mechanisms in semiconductor nanostructures and devices

   M. A. Rafiq

   Maqola20183 iqtibos

   ABIABI:AkademIndex/2026.other.557537

3. Diffusion and Electrical Behavior of Zinc in Silicon

   C. S. Fuller, François Morin

   Maqola19573 iqtibos

   ABIABI:AkademIndex/2026.other.655088

4. Mechanisms of Current Transition in High Compensated Silicon Samples with Zinc Nanoclusters

   Э. У. Арзикулов, M. Radzhabova, Sh. J. Quvondiqov +1

   MaqolaOAOchiq kirishSilicon Nanostructures and PhotoluminescenceEast European Journal of Physics20232 iqtibos

   ABIABI:AkademIndex/2023.article.002686

5. Current-Transport Mechanisms of the Al/(Bi2S3-PVA Nanocomposite)/p-Si Schottky Diodes in the Temperature Range Between 220 K and 380 K

   Sana Boughdachi, Yosef Badalı, Yashar Azizian‐Kalandaragh +1

   Maqola20182 iqtibos

   ABIABI:AkademIndex/2026.other.557538

6. Current Understanding of the Fundamental Mechanisms of Doped and Loaded Semiconducting Metal-Oxide-Based Gas Sensing Materials

   David Degler, Udo Weimar, Nicolae Bârsan

   Sharh maqola20192 iqtibos

   ABIABI:AkademIndex/2026.other.557539

7. Oncurrent-voltage and capacitance-voltage characteristics of metal-semiconductor contacts

   A. Türüt

   Maqola20202 iqtibos

   ABIABI:AkademIndex/2026.other.557540

8. Tunneling via surface dislocation in W/β-Ga₂O₃ Schottky barrier diodes

   Madani Labed, Ji Young Min, Amina Ben Slim +4

   Maqola20232 iqtibos

   ABIABI:AkademIndex/2026.other.557542

9. Determining the potential barrier presented by the interfacial layer from the temperature induced I–V characteristics in Al/p-Si Structure with native oxide layer

   Muhammed Can ÖZDEMİR, Ömer Sevgi̇li̇, İkram Orak +1

   Maqola20202 iqtibos

   ABIABI:AkademIndex/2026.other.717627

10. Infrared spectroscopy of the neutral zinc double-acceptor in silicon

    E. Merk, James Heyman, E. E. Häller

    Maqola19892 iqtibos

    ABIABI:AkademIndex/2026.other.730900

11. Local laser-induced solid-phase recrystallization of phosphorus-implanted Si/SiGe heterostructures for contacts below 4.2 K

    Malte Neul, Isabelle V. Sprave, Laura K. Diebel +6

    Maqola20242 iqtibos

    ABIABI:AkademIndex/2026.other.730901

12. Sarlavhasiz

    Boshqa1 iqtibos

    ABIABI:AkademIndex/2026.other.747363

13. Sarlavhasiz

    Boshqa1 iqtibos

    ABIABI:AkademIndex/2026.other.747364