M. Radzhabova

3 ta ish

Sharof Rashidov nomidagi Samarqand davlat universiteti

1. Mechanisms of Current Transition in High Compensated Silicon Samples with Zinc Nanoclusters

   Э. У. Арзикулов, M. Radzhabova, Sh. J. Quvondiqov +1

   MaqolaOAOchiq kirishSilicon Nanostructures and PhotoluminescenceEast European Journal of Physics20232 iqtibos

   ABIABI:AkademIndex/2023.article.002686

2. Current Mechanisms in Zinc Diffusion-Doped Silicon Samples at T = 300 K

   Э. У. Арзикулов, M. Radzhabova, Xuemin Cui +6

   MaqolaOAOchiq kirishSemiconductor materials and interfacesEast European Journal of Physics20240 iqtibos

   ABIABI:AkademIndex/2024.article.010089

3. Current Mechanisms in Zinc Diffusion-doped Silicon Samples at T = 300 K

   Э. У. Арзикулов, M. Radzhabova, S. N. +4

   PreprintAdvancements in Semiconductor Devices and Circuit DesignResearch Square20240 iqtibos

   ABIABI:AkademIndex/2024.preprint.000148