Xuemin Cui

1 ta ish

Shenyang Aerospace University

1. Current Mechanisms in Zinc Diffusion-Doped Silicon Samples at T = 300 K

   Э. У. Арзикулов, M. Radzhabova, Xuemin Cui +6

   MaqolaOAOchiq kirishSemiconductor materials and interfacesEast European Journal of Physics20240 iqtibos

   ABIABI:AkademIndex/2024.article.010089