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20 ta ish

Ish: Effect of the Angle of Incidence of Low-Energy Ar+ Ion Beams on the Composition and Structure of the GaAs Surface

  1. Electronic structure of Ga1–x Al x As nanostructures grown on the GaAs surface by ion implantation

    S. B. Donaev, Б. Е. Умирзаков, Д. А. Ташмухамедова

    MaqolaIon-surface interactions and analysisTechnical Physics201514 iqtibos
    ABI

  2. Investigation of change of the composition and structure of the CaF2/Si films surface at the low-energy bombardment

    Б. Е. Умирзаков, Д. А. Ташмухамедова, М. К. Рузибаева +2

    MaqolaSilicon Nanostructures and PhotoluminescenceNuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms201413 iqtibos
    ABI

  3. Estimation of changes in parameters of a crystal lattice and energy bands upon variation in the size of nanocrystals and nanofilms of silicides prepared by ion implantation

    Б. Е. Умирзаков, Д. А. Ташмухамедова, Kh. Kh. Kurbanov

    MaqolaSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques201112 iqtibos
    ABI

  4. Effect of surface microroughness on the composition and electronic properties of CdTe/Mo(111) films

    Y. S. Ergashov, Д. А. Ташмухамедова, Flyura Djurabekova +1

    MaqolaAdvanced Semiconductor Detectors and MaterialsBulletin of the Russian Academy of Sciences Physics201610 iqtibos
    ABI

  5. Composition, morphology, and electronic structure of the nanophases created on the SiO2 Surface by Ar+ ion bombardment

    M. B. Yusupjanova, Д. А. Ташмухамедова, Б. Е. Умирзаков

    MaqolaIon-surface interactions and analysisTechnical Physics20167 iqtibos
    ABI

  6. Composition and Structure of Ga1 – xNa x As Nanolayers Produced near the GaAs Surface by Na+ Implantation

    Kh. Kh. Boltaev, J. Sh. Sodikjanov, Д. А. Ташмухамедова +1

    MaqolaSemiconductor materials and devicesTechnical Physics20177 iqtibos
    ABI

  7. Superstructured ordering in Al x Ga1 − x As and Ga x In1 − x P alloys

    П. В. Середин, �. P. Domashevskaya, I. N. Arsentyev +3

    Maqola20136 iqtibos
    ABI

  8. Formation of defects in GaAs and Si as a result of Pd deposition onto the surface

    И. А. Карпович, С. В. Тихов, E. L. Shobolov +1

    Maqola20064 iqtibos
    ABI

  9. Field-emission pumping of a ZnSe/CdSe/ZnSe nanoheterostructure with low-energy electrons through a surface potential barrier

    S. A. Masalov, A. V. Korotchenkov, V. P. Evtikhiev +1

    Maqola20152 iqtibos
    ABI

  10. Light-induced resistive switching in silicon-based metal–insulator–semiconductor structures

    С. В. Тихов, О. Н. Горшков, M. N. Koryazhkina +2

    Maqola20162 iqtibos
    ABI

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