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24 ta ish

Ish: Mathematical Analysis of the Features of Radial p-n Junction: Influence of Temperature and Concentration

  1. Influence of the parameters to transition capacitance at NCDS-PSI heterostructure

    I.B. Sapaev, Б. Сапаев, Diyorjon Àbdullaev +5

    MaqolaOchiq kirishChalcogenide Semiconductor Thin FilmsE3S Web of Conferences202317 iqtibos
    ABI

  2. Optimization of The Influence of Temperature on The Electrical Distribution of Structures with Radial p-n Junction Structures

    Jo`shqin Abdullayev, I. B. Sapaev

    MaqolaOchiq kirishAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics202417 iqtibos
    ABI

  3. OPTIMIZING THE INFLUENCE OF DOPING AND TEMPERATURE ON THE ELECTROPHYSICAL FEATURES OF P-N AND P-I-N JUNCTION STRUCTURES

    Jo`shqin Abdullayev, I. B. Sapaev

    Maqola202415 iqtibos
    ABI

  4. Factors Influencing the Ideality Factor of Semiconductor p-n and p-i-n Junction Structures at Cryogenic Temperatures

    Jo`shqin Abdullayev, I. B. Sapaev

    MaqolaOchiq kirishSemiconductor materials and interfacesEast European Journal of Physics202413 iqtibos
    ABI

  5. Analytic Analysis of the Features of GaAs/Si Radial Heterojunctions: Influence of Temperature and Concentration

    Jo`shqin Abdullayev, I. B. Sapaev

    MaqolaOchiq kirishAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics202513 iqtibos
    ABI

  6. An Explicit Quantum-Mechanical Compact Model for the <italic>I-V</italic> Characteristics of Cylindrical Nanowire MOSFETs

    Regiane Ragi, Rafael Nobrega, Ulysses Rondina Duarte +1

    Maqola201613 iqtibos
    ABI

  7. Influence of Linear Doping Profiles on the Electrophysical Features of p-n Junctions

    Jo`shqin Abdullayev

    MaqolaOchiq kirishAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics202512 iqtibos
    ABI

  8. Surface-Potential-Based Drain Current Analytical Model for Triple-Gate Junctionless Nanowire Transistors

    Renan Trevisoli, Rodrigo T. Doria, Michelly de Souza +3

    MaqolaOchiq kirish201212 iqtibos
    ABI

  9. Modeling and calibration of electrical features of p-n junctions based on Si and GaAs

    Jo`shqin Abdullayev, I. B. Sapaev

    MaqolaOchiq kirishSemiconductor materials and interfacesPhysical Sciences and Technology202411 iqtibos
    ABI

  10. GaN nanowire ultraviolet photodetector with a graphene transparent contact

    A. V. Babichev, H. Zhang, Pierre Lavenus +5

    Maqola201311 iqtibos
    ABI

  11. Fabrication and studies on Si/InP core-shell nanowire based solar cell using etched Si nanowire arrays

    Biswajit Pal, Kalyan Jyoti Sarkar, P. Banerji

    Maqola201911 iqtibos
    ABI

  12. Theoretical analysis of incomplete ionization on the electrical behavior of radial <i>p-n</i> junction structures

    Jo`shqin Abdullayev, I. B. Sapaev, Kh. N. Juraev

    MaqolaSemiconductor Quantum Structures and DevicesLow Temperature Physics202510 iqtibos
    ABI

  13. Efficient photogeneration of charge carriers in silicon nanowires with a radial doping gradient

    Dharmapura H. K. Murthy, Tao Xu, Wanghua Chen +11

    MaqolaOchiq kirish201110 iqtibos
    ABI

  14. A GaAs Nanowire Array Solar Cell With 15.3% Efficiency at 1 Sun

    Ingvar Åberg, Giuliano Vescovi, Damir Asoli +8

    Maqola201510 iqtibos
    ABI

  15. Some Electrophysical Properties of Polycrystalline Silicon Obtained in a Solar Oven

    L. O. Olimov, Iqboljon Ibroximovich Anarboyev

    MaqolaOchiq kirishSilicon Nanostructures and PhotoluminescenceSilicon202210 iqtibos
    ABI

  16. Improvement of carrier ballisticity in junctionless nanowire transistors

    Nima Dehdashti Akhavan, Isabelle Ferain, Pedram Razavi +2

    MaqolaOchiq kirish20119 iqtibos
    ABI

  17. ENHANCEMENT OF POWER CONVERSION EFFICIENCY OF DYE-SENSITIZED SOLAR CELLS VIA INCORPORATION OF GAN SEMICONDUCTOR MATERIAL SYNTHESIZED IN HOT-WALL CHEMICAL VAPOR DEPOSITION FURNACE

    Olzat Toktarbaiuly

    Maqola20249 iqtibos
    ABI

  18. Electrical and optical properties of nanowires based solar cell with radial p-n junction

    O. V. Pylypova, А.А. Еvtukh, P.V. Parfenyuk +4

    MaqolaOchiq kirish20198 iqtibos
    ABI

  19. Controlled Doping Methods for Radial p/n Junctions in Silicon

    Rick Elbersen, Roald M. Tiggelaar, Alexander Milbrat +3

    MaqolaOchiq kirish20147 iqtibos
    ABI

  20. Theory of the Junctionless Nanowire FET

    Elena Gnani, A. Gnudi, Susanna Reggiani +1

    Maqola20116 iqtibos
    ABI

  21. Study of the Inhomogeneities of Overcompensed Silicon Samples Doped with Manganese

    M. Sh. Isaev, U. T. Asatov, Makhmudjon A. Tulametov +2

    MaqolaOchiq kirish20244 iqtibos
    ABI

  22. Study of Silicide Formation in Large Diameter Monocrystalline Silicon

    A. T. Mamadalimov, Makhmudkhodja Sh. Isaev, Mukhammadsodik N. Mamatkulov +2

    MaqolaOchiq kirishSilicon and Solar Cell TechnologiesEast European Journal of Physics20244 iqtibos
    ABI

  23. The Surface Layer Morphology of Si<Cr> Samples

    M. Sh. Isaev, A.I. Khudayberdieva, Mukhammadsodik N. Mamatkulov +2

    MaqolaOchiq kirish20243 iqtibos
    ABI

  24. Mechanism of thermoelectric material efficiency increase

    Iqboljon Anarboyev, L. O. Olimov

    MaqolaOchiq kirishAdvanced Thermoelectric Materials and DevicesAIP conference proceedings20242 iqtibos
    ABI