Ushbu ishga iqtibos qilgan ishlar

5 ta ish

Ish: Bandgap-Engineered pSi/n-CdₓS₁₋ₓ Heterojunctions: Effect of Composition on Optoelectronic Behavior

1. Experimental and Simulation-Based Investigation of p-Si/n-CdS Heterojunctions: From Cryogenic Freeze-Out to Room Temperature Operation

   J. Sh. Abdullayev, D. A. Qalandarova, M. Sh. Ibragimova +2

   MaqolaSemiconductor materials and interfacesJournal of Electronic Materials20265 iqtibos

   ABIABI:AkademIndex/2026.article.000556

2. Composition-Driven Band Engineering and Temperature Effects in pSi/nCdmZn1−mS Heterojunctions

   Jo`shqin Abdullayev, Jonibek Shakirovich Abdullayev, Ibrokhim Bayramdurdiyevich Sapaev +3

   MaqolaSemiconductor materials and interfacesJournal of Electronic Materials20261 iqtibos

   ABIABI:AkademIndex/2026.article.002954

3. Experimental and analytical investigation of incomplete ionization in p-Si/n-CdS heterojunctions at cryogenic temperatures

   J. Sh. Abdullayev, I.B. Sapaev

   MaqolaOAOchiq kirish20260 iqtibos

   ABIABI:AkademIndex/2026.article.038544

4. A Systematic Analytical and Numerical Study of Incomplete Dopant Ionization in Germanium Over 4-400 K

   M.Sh. Ibragimova, D. A. Qalandarova, N.P. Babayazova +6

   MaqolaOAOchiq kirish20260 iqtibos

   ABIABI:AkademIndex/2026.article.043892

5. Incomplete Dopant Ionization Effects in GaN Optical Photovoltaic Converters Over 4–400 K for Space Solar Energy Applications

   D. A. Qalandarova, M.Sh. Ibragimova, U.G. Salayev +6

   MaqolaOAOchiq kirish20260 iqtibos

   ABIABI:AkademIndex/2026.article.043976