Ushbu ishga iqtibos qilgan ishlar

5 ta ish

Ish: Experimental and Simulation-Based Investigation of p-Si/n-CdS Heterojunctions: From Cryogenic Freeze-Out to Room Temperature Operation

1. Experimental and analytical investigation of incomplete ionization in p-Si/n-CdS heterojunctions at cryogenic temperatures

   J. Sh. Abdullayev, I.B. Sapaev

   MaqolaOAOchiq kirish20260 iqtibos

   ABIABI:AkademIndex/2026.article.038544

2. Self-Consistent Fowler–Nordheim Tunneling Modeling in Si/GaAs Heterostructures with Optimized Nanoscale Meshing

   Jo`shqin Abdullayev, L.K. Babajanov, N.P. Babayazova +3

   MaqolaOAOchiq kirish20260 iqtibos

   ABIABI:AkademIndex/2026.article.043868

3. A Systematic Analytical and Numerical Study of Incomplete Dopant Ionization in Germanium Over 4-400 K

   M.Sh. Ibragimova, D. A. Qalandarova, N.P. Babayazova +6

   MaqolaOAOchiq kirish20260 iqtibos

   ABIABI:AkademIndex/2026.article.043892

4. Incomplete Dopant Ionization Effects in GaN Optical Photovoltaic Converters Over 4–400 K for Space Solar Energy Applications

   D. A. Qalandarova, M.Sh. Ibragimova, U.G. Salayev +6

   MaqolaOAOchiq kirish20260 iqtibos

   ABIABI:AkademIndex/2026.article.043976

5. Modeling the Impact of Incomplete Dopant Ionization on Built in Potential and C–V Characteristics of GaN p–n Junctions: A SCAPS-1D Study

   Jo`shqin Abdullayev, I. B. Sapaev, Jonibek Sh. Abdullayev +5

   MaqolaOAOchiq kirish20260 iqtibos

   ABIABI:AkademIndex/2026.article.043990