Ushbu ishga iqtibos qilgan ishlar

4 ta ish

Ish: Impact of incomplete ionization on the critical electric field of <i>p</i> - <i>n</i> junction structures based on Si and GaAs

1. Experimental and analytical investigation of incomplete ionization in p-Si/n-CdS heterojunctions at cryogenic temperatures

   J. Sh. Abdullayev, I.B. Sapaev

   MaqolaOAOchiq kirish20260 iqtibos

   ABIABI:AkademIndex/2026.article.038544

2. Self-Consistent Fowler–Nordheim Tunneling Modeling in Si/GaAs Heterostructures with Optimized Nanoscale Meshing

   Jo`shqin Abdullayev, L.K. Babajanov, N.P. Babayazova +3

   MaqolaOAOchiq kirish20260 iqtibos

   ABIABI:AkademIndex/2026.article.043868

3. A Systematic Analytical and Numerical Study of Incomplete Dopant Ionization in Germanium Over 4-400 K

   M.Sh. Ibragimova, D. A. Qalandarova, N.P. Babayazova +6

   MaqolaOAOchiq kirish20260 iqtibos

   ABIABI:AkademIndex/2026.article.043892

4. Modeling the Impact of Incomplete Dopant Ionization on Built in Potential and C–V Characteristics of GaN p–n Junctions: A SCAPS-1D Study

   Jo`shqin Abdullayev, I. B. Sapaev, Jonibek Sh. Abdullayev +5

   MaqolaOAOchiq kirish20260 iqtibos

   ABIABI:AkademIndex/2026.article.043990