Ushbu ishga iqtibos qilgan ishlar

2 ta ish

Ish: Mathematical Modeling of Electrostatic Potential in Radial and Planar p–n Junctions: A Comparative Study

1. Experimental and analytical investigation of incomplete ionization in p-Si/n-CdS heterojunctions at cryogenic temperatures

   J. Sh. Abdullayev, I.B. Sapaev

   MaqolaOAOchiq kirish20260 iqtibos

   ABIABI:AkademIndex/2026.article.038544

2. Modeling the Impact of Incomplete Dopant Ionization on Built in Potential and C–V Characteristics of GaN p–n Junctions: A SCAPS-1D Study

   Jo`shqin Abdullayev, I. B. Sapaev, Jonibek Sh. Abdullayev +5

   MaqolaOAOchiq kirish20260 iqtibos

   ABIABI:AkademIndex/2026.article.043990