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Ish: First-principles study of cooperative GaP incorporation and defect clustering in silicon
Special points for Brillouin-zone integrations
Hendrik J. Monkhorst, J.D. Pack
Maqola197675 iqtibosABIBand parameters for III–V compound semiconductors and their alloys
I. Vurgaftman, J. R. Meyer, L. R. Ram‐Mohan
Maqola200123 iqtibosABIInvestigation of the Crystallographic Perfection and Photoluminescence Spectrum of the Epitaxial Films of (Si2)1-x(GaP)x<a:math xmlns:a="http://www.w3.org/1998/Math/MathML" id="M1"> <a:mfenced open="(" close=")" separators="|"> <a:mrow> <a:mn>0</a:mn> <a:mo>≤</a:mo> <a:mi>x</a:mi> <a:mo>≤</a:mo> <a:mn>1</a:mn> </a:mrow> </a:mfenced> </a:math> Solid Solution, Grown on Si and GaP Substrates with the Crystallographic Orientation (111)
A.S. Saidov, D. V. Saparov, Sh. N. Usmonov +5
MaqolaOchiq kirishSemiconductor Quantum Structures and DevicesAdvances in Condensed Matter Physics202113 iqtibosABIGround State of the Electron Gas by a Stochastic Method
David M. Ceperley, B. J. Alder
Maqola198011 iqtibosABIRestoring the Density-Gradient Expansion for Exchange in Solids and Surfaces
John P. Perdew, Adrienn Ruzsinszky, Gábor I. Csonka +5
MaqolaOchiq kirish200811 iqtibosABI