Maqola

Dose Dependent Amorphization and Trap Assisted Conduction in Gamma and X-Ray Irradiated SiO2: Structural and Electrical Evidence for Defect Engineering

Renaldy Bernardo SaragihNuclear Chemical Department, Polytechnic Institute of Nuclear Technology, Babarsari Street, Special Region of Yogyakarta 50558, IndonesiaSherina Massayu PutriNuclear Chemical Department, Polytechnic Institute of Nuclear Technology, Babarsari Street, Special Region of Yogyakarta 50558, IndonesiaNikita SalshabilaNuclear Chemical Department, Polytechnic Institute of Nuclear Technology, Babarsari Street, Special Region of Yogyakarta 50558, IndonesiaDhita AriyantiNuclear Chemical Department, Polytechnic Institute of Nuclear Technology, Babarsari Street, Special Region of Yogyakarta 50558, IndonesiaZainal AriefDepartment of Electrical Engineering, Electronic Engineering Polytechnic Institute of Surabaya, Surabaya, IndonesiaRana Muhammad ZulqarnainDepartment of Mathematics, Saveetha School of Engineering, SIMATS Thandalam, Chennai, 602105, Tamilnadu, IndiaMursaleen ShahidMirjalol IsmoilovEngineering Faculty, Urgench State University, Urgench, Uzbekistan

2026en

Ochiq kirish: yoʻq

ABI

Annotatsiya

Annotatsiya mavjud emas.

Identifikatorlar

DOI: 10.1016/j.radphyschem.2026.114479

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