Asosiy kontentga oʻtish
AkademIndex

Xizmatlar

← Ishga qaytish

Ushbu ish iqtibos qilgan ishlar

10 ta ish

Ish: Electronic structure of Ga1–x Al x As nanostructures grown on the GaAs surface by ion implantation

  1. Electron spectroscopy of the nanostructures created in Si, GaAs, and CaF2 surface layers using low-energy ion implantation

    Б. Е. Умирзаков, Д. А. Ташмухамедова, D. M. Muradkabilov +1

    MaqolaSemiconductor materials and interfacesTechnical Physics201320 iqtibos
    ABI

  2. Analysis of the structure and properties of heterostructured nanofilms prepared by epitaxy and ion implantation methods

    Б. Е. Умирзаков, Д. А. Ташмухамедова, М. К. Рузибаева +3

    MaqolaMetal and Thin Film MechanicsTechnical Physics201315 iqtibos
    ABI

  3. Molecular Beam Epitaxy and Heterostructures

    Leroy L. Chang, K. H. Ploog

    KitobOchiq kirish19859 iqtibos
    ABI

  4. Superstructured ordering in Al x Ga1 − x As and Ga x In1 − x P alloys

    П. В. Середин, �. P. Domashevskaya, I. N. Arsentyev +3

    Maqola20136 iqtibos
    ABI

  5. Semiconductor lasers with internal wavelength selection

    V. V. Zolotarev, A. Yu. Leshko, A. V. Lyutetskiĭ +10

    Maqola20133 iqtibos
    ABI

  6. Temperature-dependent excitonic absorption in long-period multiple In x Ga1 − x As/GaAs quantum well structures

    S. A. Vaganov, R. P. Seĭsyan

    Maqola20112 iqtibos
    ABI

  7. Lateral photoconductivity of AlGaAs/InGaAs structures with quantum wells and self-organized quantum dots under interband illumination

    O. A. Shegaǐ, A. K. Bakarov, A. K. Kalagin +1

    Maqola20052 iqtibos
    ABI

  8. First-principle calculations of electronic and positronic properties of AlGaAs2

    S. Laref, S. Méçabih, B. Abbar +2

    Maqola20072 iqtibos
    ABI

  9. Trapping of charge carriers into InAs/AlAs quantum dots at liquid-helium temperature

    D. S. Abramkin, К. С. Журавлев, Т. С. Шамирзаев +2

    Maqola20112 iqtibos
    ABI

  10. Sarlavhasiz

    Boshqa1 iqtibos
    ABI