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Ish: Swift Heavy Ion Irradiation Effects in SiC Measured by Positrons

1. Electrical and Optical Study of 4H-SiC CVD Epitaxial Layers Irradiated with Swift Heavy Ions

   Evgenia V. Kalinina, G. Kholuyanov, Grigory Onushkin +7

   MaqolaOAOchiq kirishSilicon Carbide Semiconductor TechnologiesMaterials science forum20030 iqtibos

   ABIABI:AkademIndex/2003.article.000141

2. Comparative Study of 4H-SiC Irradiated with Neutrons and Heavy Ions

   Evgenia V. Kalinina, G. Kholuyanov, Grigory Onushkin +6

   MaqolaOAOchiq kirishSilicon Carbide Semiconductor TechnologiesMaterials science forum20050 iqtibos

   ABIABI:AkademIndex/2005.article.000233