Ushbu ishga iqtibos qilgan ishlar

4 ta ish

Ish: Physical mechanism of gettering of impurity Ni atom clusters in Si lattice

1. Investigation of the Influence of Nickel on the Behavior of Thermal Donors in Silicon

   B. K. Ismaylov, N. F. Zikrillayev, Kanatbay A. Ismailov +2

   MaqolaOAOchiq kirishSilicon and Solar Cell TechnologiesEast European Journal of Physics20250 iqtibos

   ABIABI:AkademIndex/2025.article.009032

2. Thermal stability parameters of silicon doped with nickel impurity atoms

   B. K. Ismaylov, Kanatbay A. Ismailov, Paraxat Dlimbetov +2

   MaqolaThermal properties of materialsAIP conference proceedings20250 iqtibos

   ABIABI:AkademIndex/2025.article.009659

3. The Influence of Impurity Nano- and Microclusters on the Photovoltaic and Electrophysical Properties of Silicon

   N. F. Zikrillaev, K. S. Ayupov, Kh. F. Zikrillaev +4

   MaqolaSilicon and Solar Cell TechnologiesSurface Engineering and Applied Electrochemistry20260 iqtibos

   ABIABI:AkademIndex/2026.article.009999

4. TURLI METALL KIRISHMALARI ISHTIROKIDA KREMNIYDA O‘Z-O‘ZIDAN SHAKLLANUVCHI NANOKOMPOZITLARNING REKOMBINATSION FAOLLIGINI QIYOSIY TAHLIL QILISH

   Farruxbek Esonboyev

   proceedingOAOchiq kirish20260 iqtibos

   ABIABI:AkademIndex/2026.proceeding.007354