Maqola

Flux redistribution of channeled fast electrons

Д. Е. ПоповInstitute of Nuclear Physics, Tomsk Polytechnical InstituteV. V. KaplinInstitute of Nuclear Physics, Tomsk Polytechnical InstituteS.A. VorobievInstitute of Nuclear Physics, Tomsk Polytechnical Institute

physica status solidi (b)journal1979en

ABI

Annotatsiya

Abstract The orientation dependence of planar channeling for 0.5 to 2.5 MeV electron transmission through crystalline Si is experimentally observed. The phenomenon of spatial flux redistribution results from the formation of bound states of the channeled electrons with atomic planes. Application of electron channeling is considered for the control of irradiation effects in crystals and the study of perfection of the crystalline structure.

Mavzular

Crystallography and Radiation Phenomena Nuclear materials and radiation effects Advanced Electron Microscopy Techniques and Applications

Identifikatorlar

DOI: 10.1002/pssb.2220960127

Iqtiboslar va manbalar

2 ta iqtibos 8 ta foydalanilgan manba

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